UN6110Q Datasheet and Replacement
Type Designator: UN6110Q
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: MT-1
UN6110Q Transistor Equivalent Substitute - Cross-Reference Search
UN6110Q Datasheet (PDF)
un6110q un6110r un6110s un6111 un6112 un6113 un6114 un6115q un6115r un6115s un6116q un6116r un6116s un6117q un6117r un6117s.pdf
Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L Silicon PNP epitaxial planer transistor Unit mm For digital circuits 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 0.65 max. MT-1 type package, allowing supply... See More ⇒
Datasheet: UN521F , UN521K , UN521L , UN521M , UN521N , UN521T , UN521V , UN521Z , A1941 , UN6110R , UN6110S , UN6111 , UN6112 , UN6113 , UN6114 , UN6115Q , UN6115R .
History: CCS2053EFG | RN2972HFE | MRF839F | KTC3199-Y | L9012SLT3G | BFQ88B | CD9011D
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History: CCS2053EFG | RN2972HFE | MRF839F | KTC3199-Y | L9012SLT3G | BFQ88B | CD9011D
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