UN6113 Datasheet, Equivalent, Cross Reference Search
Type Designator: UN6113
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.4
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 80
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: MT-1
UN6113 Transistor Equivalent Substitute - Cross-Reference Search
UN6113 Datasheet (PDF)
un6110q un6110r un6110s un6111 un6112 un6113 un6114 un6115q un6115r un6115s un6116q un6116r un6116s un6117q un6117r un6117s.pdf
Transistors with built-in ResistorUN6111/6112/6113/6114/6115/6116/6117/6118/6119/6110/611D/611E/611F/611H/611LSilicon PNP epitaxial planer transistorUnit: mmFor digital circuits6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.0.65 max.MT-1 type package, allowing supply
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
