All Transistors. UN6113 Datasheet

 

UN6113 Datasheet and Replacement


   Type Designator: UN6113
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: MT-1
 

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UN6113 Datasheet (PDF)

 ..1. Size:178K  panasonic
 un6110q un6110r un6110s un6111 un6112 un6113 un6114 un6115q un6115r un6115s un6116q un6116r un6116s un6117q un6117r un6117s.pdf pdf_icon

UN6113

Transistors with built-in ResistorUN6111/6112/6113/6114/6115/6116/6117/6118/6119/6110/611D/611E/611F/611H/611LSilicon PNP epitaxial planer transistorUnit: mmFor digital circuits6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.0.65 max.MT-1 type package, allowing supply

Datasheet: UN521T , UN521V , UN521Z , UN6110Q , UN6110R , UN6110S , UN6111 , UN6112 , A733 , UN6114 , UN6115Q , UN6115R , UN6115S , UN6116Q , UN6116R , UN6116S , UN6117Q .

History: CHUMZ1GP | SE8541 | BD576 | SBC847BPDW1T1G | SC108C | 2SC1659

Keywords - UN6113 transistor datasheet

 UN6113 cross reference
 UN6113 equivalent finder
 UN6113 lookup
 UN6113 substitution
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