All Transistors. UN6114 Datasheet

 

UN6114 Datasheet and Replacement


   Type Designator: UN6114
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: MT-1

 UN6114 Transistor Equivalent Substitute - Cross-Reference Search

   

UN6114 Datasheet (PDF)

 ..1. Size:178K  panasonic
 un6110q un6110r un6110s un6111 un6112 un6113 un6114 un6115q un6115r un6115s un6116q un6116r un6116s un6117q un6117r un6117s.pdf pdf_icon

UN6114

Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L Silicon PNP epitaxial planer transistor Unit mm For digital circuits 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 0.65 max. MT-1 type package, allowing supply... See More ⇒

Datasheet: UN521V , UN521Z , UN6110Q , UN6110R , UN6110S , UN6111 , UN6112 , UN6113 , 2SC2073 , UN6115Q , UN6115R , UN6115S , UN6116Q , UN6116R , UN6116S , UN6117Q , UN6117R .

History: NB112EJ | DTL3426 | 2SD1936 | CD3285 | 3N132 | NB211FH | NB211YG

Keywords - UN6114 transistor datasheet

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