All Transistors. UN6116S Datasheet

 

UN6116S Datasheet and Replacement


   Type Designator: UN6116S
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 290
   Noise Figure, dB: -
   Package: MT-1
 

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UN6116S Datasheet (PDF)

 ..1. Size:178K  panasonic
 un6110q un6110r un6110s un6111 un6112 un6113 un6114 un6115q un6115r un6115s un6116q un6116r un6116s un6117q un6117r un6117s.pdf pdf_icon

UN6116S

Transistors with built-in ResistorUN6111/6112/6113/6114/6115/6116/6117/6118/6119/6110/611D/611E/611F/611H/611LSilicon PNP epitaxial planer transistorUnit: mmFor digital circuits6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.0.65 max.MT-1 type package, allowing supply

Datasheet: UN6112 , UN6113 , UN6114 , UN6115Q , UN6115R , UN6115S , UN6116Q , UN6116R , 2SA1837 , UN6117Q , UN6117R , UN6117S , UN6118 , UN6119 , UN611D , UN611E , UN611F .

History: BCP56-10T3G | PHPT610030PK | SS9013 | KN4A4M | TBC857 | RT2N20M | BU931ZPFI

Keywords - UN6116S transistor datasheet

 UN6116S cross reference
 UN6116S equivalent finder
 UN6116S lookup
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