UN6117S Datasheet and Replacement
Type Designator: UN6117S
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 290
Noise Figure, dB: -
Package: MT-1
UN6117S Substitution
UN6117S Datasheet (PDF)
un6110q un6110r un6110s un6111 un6112 un6113 un6114 un6115q un6115r un6115s un6116q un6116r un6116s un6117q un6117r un6117s.pdf

Transistors with built-in ResistorUN6111/6112/6113/6114/6115/6116/6117/6118/6119/6110/611D/611E/611F/611H/611LSilicon PNP epitaxial planer transistorUnit: mmFor digital circuits6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.0.65 max.MT-1 type package, allowing supply
Datasheet: UN6115Q , UN6115R , UN6115S , UN6116Q , UN6116R , UN6116S , UN6117Q , UN6117R , B772 , UN6118 , UN6119 , UN611D , UN611E , UN611F , UN611H , UN611L , UN6121 .
History: 2SB242A | RN1131MFV | 2SD1827 | RN1113MFV | 2SB895 | MJW16010A
Keywords - UN6117S transistor datasheet
UN6117S cross reference
UN6117S equivalent finder
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UN6117S substitution
UN6117S replacement
History: 2SB242A | RN1131MFV | 2SD1827 | RN1113MFV | 2SB895 | MJW16010A



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