UN6124 Datasheet and Replacement
Type Designator: UN6124
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: MT-1
UN6124 Substitution
UN6124 Datasheet (PDF)
un6121 un6122 un6123 un6124 un612x un612y.pdf

Transistors with built-in ResistorUN6121/6122/6123/6124/612X/612YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm6.9 0.1 1.05 2.5 0.1Features 0.05 (1.45)0.7 4.00.8Costs can be reduced through downsizing of the equipment andreduction of the number of parts.MT-1 type package, allowing supply with the radial taping.0.65 max.Resistance by Part N
Datasheet: UN611D , UN611E , UN611F , UN611H , UN611L , UN6121 , UN6122 , UN6123 , TIP42 , UN612X , UN612Y , UN6210Q , UN6210R , UN6210S , UN6211 , UN6212 , UN6213 .
History: TR310249 | DTC143XE | LBC846BDW1T1G | BC848CR
Keywords - UN6124 transistor datasheet
UN6124 cross reference
UN6124 equivalent finder
UN6124 lookup
UN6124 substitution
UN6124 replacement
History: TR310249 | DTC143XE | LBC846BDW1T1G | BC848CR



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