UN6216R Datasheet, Equivalent, Cross Reference Search
Type Designator: UN6216R
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
Package: MT-1
UN6216R Transistor Equivalent Substitute - Cross-Reference Search
UN6216R Datasheet (PDF)
..1. Size:173K panasonic
un6210q un6210r un6210s un6211 un6212 un6213 un6214 un6215q un6215r un6215s un6216q un6216r un6216s un6217q un6217r un6217s.pdf
un6210q un6210r un6210s un6211 un6212 un6213 un6214 un6215q un6215r un6215s un6216q un6216r un6216s un6217q un6217r un6217s.pdf
Transistors with built-in ResistorUN6211/6212/6213/6214/6215/6216/6217/6218/6219/6210/621D/621E/621F/621K/621LSilicon NPN epitaxial planer transistorUnit: mmFor digital circuits6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.0.65 max.MT-1 type package, allowing supply
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
