UN6216R Datasheet and Replacement
Type Designator: UN6216R
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
Package: MT-1
UN6216R Substitution
UN6216R Datasheet (PDF)
un6210q un6210r un6210s un6211 un6212 un6213 un6214 un6215q un6215r un6215s un6216q un6216r un6216s un6217q un6217r un6217s.pdf

Transistors with built-in ResistorUN6211/6212/6213/6214/6215/6216/6217/6218/6219/6210/621D/621E/621F/621K/621LSilicon NPN epitaxial planer transistorUnit: mmFor digital circuits6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.0.65 max.MT-1 type package, allowing supply
Datasheet: UN6211 , UN6212 , UN6213 , UN6214 , UN6215Q , UN6215R , UN6215S , UN6216Q , BC556 , UN6216S , UN6217Q , UN6217R , UN6217S , UN6218 , UN6219 , UN621D , UN621E .
History: BC858BWT1
Keywords - UN6216R transistor datasheet
UN6216R cross reference
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History: BC858BWT1



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