UN6218 Datasheet and Replacement
Type Designator: UN6218
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 0.51 kOhm
Built in Bias Resistor R2 = 5.1 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: MT-1
UN6218 Transistor Equivalent Substitute - Cross-Reference Search
UN6218 Datasheet (PDF)
un6210q un6210r un6210s un6211 un6212 un6213 un6214 un6215q un6215r un6215s un6216q un6216r un6216s un6217q un6217r un6217s.pdf
Transistors with built-in Resistor UN6211/6212/6213/6214/6215/6216/6217/6218/ 6219/6210/621D/621E/621F/621K/621L Silicon NPN epitaxial planer transistor Unit mm For digital circuits 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 0.65 max. MT-1 type package, allowing supply... See More ⇒
Datasheet: UN6215R , UN6215S , UN6216Q , UN6216R , UN6216S , UN6217Q , UN6217R , UN6217S , D965 , UN6219 , UN621D , UN621E , UN621F , UN621L , UN621K , UN6221 , UN6222 .
History: RN2965CT | CD9011D | 3DD159D | KTC3199-Y | BFQ88B | RN2972HFE | L9012SLT3G
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History: RN2965CT | CD9011D | 3DD159D | KTC3199-Y | BFQ88B | RN2972HFE | L9012SLT3G
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