UN6218 Datasheet, Equivalent, Cross Reference Search
Type Designator: UN6218
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 0.51 kOhm
Built in Bias Resistor R2 = 5.1 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.4
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 150
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: MT-1
UN6218 Transistor Equivalent Substitute - Cross-Reference Search
UN6218 Datasheet (PDF)
un6210q un6210r un6210s un6211 un6212 un6213 un6214 un6215q un6215r un6215s un6216q un6216r un6216s un6217q un6217r un6217s.pdf
Transistors with built-in ResistorUN6211/6212/6213/6214/6215/6216/6217/6218/6219/6210/621D/621E/621F/621K/621LSilicon NPN epitaxial planer transistorUnit: mmFor digital circuits6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.0.65 max.MT-1 type package, allowing supply
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BSS28 | UN921D | BST39
