UN621D Datasheet and Replacement
Type Designator: UN621D
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 4.7
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: MT-1
UN621D Substitution
UN621D Datasheet (PDF)
un6210q un6210r un6210s un6211 un6212 un6213 un6214 un6215q un6215r un6215s un6216q un6216r un6216s un6217q un6217r un6217s.pdf

Transistors with built-in ResistorUN6211/6212/6213/6214/6215/6216/6217/6218/6219/6210/621D/621E/621F/621K/621LSilicon NPN epitaxial planer transistorUnit: mmFor digital circuits6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.0.65 max.MT-1 type package, allowing supply
Datasheet: UN6216Q , UN6216R , UN6216S , UN6217Q , UN6217R , UN6217S , UN6218 , UN6219 , 2SD669 , UN621E , UN621F , UN621L , UN621K , UN6221 , UN6222 , UN6223 , UN6224 .
History: BFP183T | BC848CWT1G | BFP182T | LBC857CTT1G | DRA3123J | BC849ALT1 | DMG9640T
Keywords - UN621D transistor datasheet
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History: BFP183T | BC848CWT1G | BFP182T | LBC857CTT1G | DRA3123J | BC849ALT1 | DMG9640T



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