UN6221 Datasheet. Specs and Replacement
Type Designator: UN6221 📄📄
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: MT-1
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UN6221 datasheet
un6221 un6222 un6223 un6224.pdf ![]()
Transistors with built-in Resistor UN6221/6222/6223/6224 Silicon NPN epitaxial planer transistor For digital circuits Unit mm 6.9 0.1 1.05 2.5 0.1 Features 0.05 (1.45) 0.7 4.0 0.8 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 0.65 max. Resistance by Part Number (R1)... See More ⇒
Detailed specifications: UN6217S, UN6218, UN6219, UN621D, UN621E, UN621F, UN621L, UN621K, BC639, UN6222, UN6223, UN6224, UN9110Q, UN9110R, UN9110S, UN9111, UN9112
Keywords - UN6221 pdf specs
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BJT Parameters and How They Relate
History: ECG12 | 2SB223 | HB857 | BLD132D | UN9212 | AT41410 | 2N6654
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