UN6222 Datasheet. Specs and Replacement

Type Designator: UN6222  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: MT-1

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UN6222 datasheet

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 un6221 un6222 un6223 un6224.pdf pdf_icon

UN6222

Transistors with built-in Resistor UN6221/6222/6223/6224 Silicon NPN epitaxial planer transistor For digital circuits Unit mm 6.9 0.1 1.05 2.5 0.1 Features 0.05 (1.45) 0.7 4.0 0.8 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 0.65 max. Resistance by Part Number (R1)... See More ⇒

Detailed specifications: UN6218, UN6219, UN621D, UN621E, UN621F, UN621L, UN621K, UN6221, 2SD669, UN6223, UN6224, UN9110Q, UN9110R, UN9110S, UN9111, UN9112, UN9113

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