UN6223 Datasheet and Replacement
Type Designator: UN6223
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: MT-1
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UN6223 Datasheet (PDF)
un6221 un6222 un6223 un6224.pdf

Transistors with built-in ResistorUN6221/6222/6223/6224Silicon NPN epitaxial planer transistorFor digital circuitsUnit: mm6.9 0.1 1.05 2.5 0.1Features 0.05 (1.45)0.7 4.00.8Costs can be reduced through downsizing of the equipment andreduction of the number of parts.MT-1 type package, allowing supply with the radial taping.0.65 max.Resistance by Part Number(R1)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | 2G385 | 3DG2500 | KRA741U
Keywords - UN6223 transistor datasheet
UN6223 cross reference
UN6223 equivalent finder
UN6223 lookup
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History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | 2G385 | 3DG2500 | KRA741U



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