UN6223 Datasheet, Equivalent, Cross Reference Search
Type Designator: UN6223
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.6
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: MT-1
UN6223 Transistor Equivalent Substitute - Cross-Reference Search
UN6223 Datasheet (PDF)
un6221 un6222 un6223 un6224.pdf
Transistors with built-in ResistorUN6221/6222/6223/6224Silicon NPN epitaxial planer transistorFor digital circuitsUnit: mm6.9 0.1 1.05 2.5 0.1Features 0.05 (1.45)0.7 4.00.8Costs can be reduced through downsizing of the equipment andreduction of the number of parts.MT-1 type package, allowing supply with the radial taping.0.65 max.Resistance by Part Number(R1)
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
