UN911F Datasheet. Specs and Replacement
Type Designator: UN911F 📄📄
SMD Transistor Code: 6O
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SS-MINI
📄📄 Copy
UN911F Substitution
- BJT ⓘ Cross-Reference Search
UN911F datasheet
Transistors with built-in Resistor UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Silicon PNP epitaxial planer transistor Unit mm For digital circuits 1.6 0.15 0.4 0.8 0.1 0.4 Features 1 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 3 SS-Mini type package, allowing automatic in... See More ⇒
Detailed specifications: UN9117S, UN9118, UN9119, UN911AJ, UN911BJ, UN911CJ, UN911D, UN911E, 2N5551, UN911H, UN911L, UN921N, UN9210Q, UN9210R, UN9210S, UN9211, UN9212
Keywords - UN911F pdf specs
UN911F cross reference
UN911F equivalent finder
UN911F pdf lookup
UN911F substitution
UN911F replacement
BJT Parameters and How They Relate
History: UN9212 | 2SB955K | ECG12 | HB857 | BLD132D | MMUN2133LT1G | 2N5812
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
c945 transistor equivalent | irfz44 datasheet | tip3055 transistor | irf530 datasheet | 2sc2625 | 2sc1815 transistor | 2sd718 | 2n3053 transistor

