2N5367 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N5367
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92

2N5367 Transistor Equivalent Substitute - Cross-Reference Search

2N5367 Datasheet (PDF)

..1. Size:43K microelectronics
2n5367.pdf

..2. Size:1285K sprague
2n5306 2n5306a 2n5307 2n5308 2n5308a 2n5309 2n5310 2n5354 2n5355 2n5356 2n5365 2n5366 2n5367 2n5400 2n5401 2n5418.pdf

9.1. Size:60K fairchild semi
2n5366.pdf

2N5366PNP General Purpose Amplifier This device is designed for general purpose amplifiers applications at collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base

9.2. Size:218K no
2n5365.pdf