2N5369 Specs and Replacement

Type Designator: 2N5369

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

 2N5369 Substitution

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2N5369 datasheet

 9.1. Size:60K  fairchild semi

 2n5366.pdf pdf_icon

2N5369

2N5366 PNP General Purpose Amplifier This device is designed for general purpose amplifiers applications at collector currents to 300mA. Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base ... See More ⇒

 9.2. Size:218K  no

 2n5365.pdf pdf_icon

2N5369

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 9.3. Size:43K  microelectronics

 2n5367.pdf pdf_icon

2N5369

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 9.4. Size:86K  microelectronics

 2n5368-69 2n5370-75.pdf pdf_icon

2N5369

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Detailed specifications: 2N5357, 2N535A, 2N535B, 2N536, 2N5365, 2N5366, 2N5367, 2N5368, BD140, 2N537, 2N5370, 2N5371, 2N5372, 2N5373, 2N5374, 2N5375, 2N5376

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