W21 Datasheet, Equivalent, Cross Reference Search

Order this documentMOTOROLAby MJW21192/DSEMICONDUCTOR TECHNICAL DATANPNMJW21192Complementary Silicon PlasticPNPPower TransistorsMJW21191Specifically designed for power audio output, or high power drivers in audioamplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms8.0 AMPER

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DPreliminary Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanced

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DDesigner's Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanc

STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V

STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V

STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V

STP/F21NM60ND-STW21NM60NDSTB21NM60ND-STI21NM60NDN-channel 600 V, 0.17 , 17 A FDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max 33 13221STB21NM60ND 650 V

STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V

STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60NDN-channel 600 V, 0.17 typ., 17 A FDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) Order codes IDTJmax max331 21STB21NM60ND 650 V 0.22 17 AD2PAK TO-220FPSTF21NM60ND 650 V 0.22 17 ASTP21NM60ND 650 V 0.22 17 ATABSTW21NM60N

STB21N65M5, STF21N65M5STI21N65M5, STP21N65M5, STW21N65M5N-channel 650 V, 0.175 , 17 A MDmesh V Power MOSFETD2PAK, TO-220FP, TO-220, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type ID PWTJmax max3231STB21N65M5 17 A 125 W 21TO-220STF21N65M5 17 A(1) 30 WIPAKSTI21N65M5 710 V

STB21N90K5, STF21N90K5, STP21N90K5,STW21N90K5N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW331STB21N90K5 250 W 21D2PAKTO-220FPSTF21N90K5 40 W900 V

Ordering number:EN5908P-Channel Silicon MOSFETFW213DC-DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2129[FW213]8 51:Source12:Gate114 3:Source20.25.04:Gate25:Drain26:Drain27:Drain18:Drain10.595 1.27Specifications 0.43SANYO:SOP8Absolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings

Ordering number :EN5850N-Channel Silicon MOS FETFW214Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2129[FW214]8 51:Source12:Gate13:Source24:Gate2140.25:Drain25.06:Drain27:Drain18:Drain10.595 1.270.43SANYO:SOP8SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Co

Ordering number:EN5579AN-Channel Silicon MOSFETFW211DC-DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2129[FW211]8 51:Source 12:Gate 11 43:Source 20.25.04:Gate 25:Drain 26:Drain 27:Drain 11.270.595 0.438:Drain 1SpecificationsSANYO:SOP8Absolute Maximum Ratings at Ta = 25CParameter Symbol Cond

Ordering number:EN5481N-Channel Silicon MOSFETFW215DC-DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2129[FW215]8 51:Source 12:Gate 13:Source 2140.25.0 4:Gate 25:Drain 26:Drain 27:Drain 18:Drain 1Specifications0.595 1.270.43SANYO:SOP8Absolute Maximum Ratings at Ta = 25CParameter Symbol Condition

VDS Tjmax G G

MJW21195 (PNP)MJW21196 (NPN)Silicon Power TransistorsThe MJW21195 and MJW21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 AdcCOMPLEMENTARY Excell

MJW21192 (NPN),MJW21191 (PNP)Complementary SiliconPlastic Power TransistorsSpecifically designed for power audio output, or high power driversin audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperaturehttp://onsemi.com All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms8.0 A TO-247AE PackagePOWER TRANSISTORS Pb-Free Packages

NJW21193G (PNP)NJW21194G (NPN)Preferred DevicesSilicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE

MJW21195 (PNP)MJW21196 (NPN)Silicon Power TransistorsThe MJW21195 and MJW21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 AdcCOMPLEMENTARY Excell

MJW21195 (PNP)MJW21196 (NPN)Silicon Power TransistorsThe MJW21195 and MJW21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 AdcCOMPLEMENTARY Excell

NJW21193G (PNP)NJW21194G (NPN)Silicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current GainCOMPLEMENTARY SILICON Excellent Gain Linearit

Ordering number : EN8994BFW217AN-Channel Power MOSFEThttp://onsemi.com35V, 6A, 39m , Dual SOIC8Features On-state resistance RDS(on)1=30m (typ.) 4.5V drive Halogen free compliance Protection Diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGS

Ordering number : ENA0176CFW216AN-Channel Power MOSFEThttp://onsemi.com35V, 4.5A, 64m , Dual SOIC8Features ON-resistance Nch : RDS(on)1=49m (typ.) 4.0V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 35 VGate to Source Voltage

MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion CharacterizedCOMPLEMENTARY SILICON High DC Current GainPOWER TRANSISTORS Excelle

NJW21193G (PNP)NJW21194G (NPN)Silicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current GainCOMPLEMENTARY SILICON Excellent Gain Linearit

MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE = 20 Min @ IC = 8 AdcP

MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE = 20 Min @ IC = 8 AdcP

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION With TO-247 package Complement to type MJW21192 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION With TO-247 package Complement to type MJW21191 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter ABSOL

isc Silicon NPN Power Transistor NJW21194GDESCRIPTIONLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon PNP Power Transistor MJW21191DESCRIPTIONDC Current Gain Specified up to 8.0 Amperesat TemperatureHigh SOA: 20 A, 18 V, 100 msTO3PN PackageComplement to Type MJW21192Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSdesigned for power audio output, or high power driversin audio amplifiers applicationsAB

isc Silicon PNP Power Transistor NJW21193GDESCRIPTIONLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor BDW21DESCRIPTIONWith TO-3 PackageHigh Current CapabilityWide area of safe operationComplement to Type BDW22100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE M

isc Silicon NPN Power Transistor MJW21194DESCRIPTIONTotal Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = 8 AdcFEComplement to Type MJW21193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output,disk head positionersand linear applications.ABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor MJW21193DESCRIPTIONTotal Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = -8 AdcFEComplement to Type MJW21194Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output,disk head positionersand linear applications.ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor MJW21192DESCRIPTIONDC Current Gain Specified up to 8.0Amperes at Temperature High DC Current Gain h FE = 5(Min )@ I C = 8 AdcTO3PN PackageComplement to Type MJW21191Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power audio output,or high power driversin audio

isc N-Channel MOSFET Transistor SPW21N50C3ISPW21N50C3FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 50