XB114 Datasheet and Replacement

   Type Designator: XB114
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.09 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Max. Operating Junction Temperature (Tj): 55 °C
   Forward Current Transfer Ratio (hFE), MIN: 47
   Noise Figure, dB: -
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