All Transistors. ZT66 Datasheet

 

ZT66 Datasheet, Equivalent, Cross Reference Search

Type Designator: ZT66

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 38

Noise Figure, dB: -

Package: TO5

ZT66 Transistor Equivalent Substitute - Cross-Reference Search

 

ZT66 Datasheet (PDF)

1.1. nzt660-a.pdf Size:429K _fairchild_semi

ZT66
ZT66

April 2005 NZT660/NZT660A PNP Low Saturation Transistor • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 4 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter NZT660 NZT660A Units VCEO Collector-Emitter Voltage 60 60 V VCBO Collector-Bas

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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