All Transistors. ZT66 Datasheet

 

ZT66 Datasheet and Replacement


   Type Designator: ZT66
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 38
   Noise Figure, dB: -
   Package: TO5
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ZT66 Datasheet (PDF)

 0.1. Size:429K  fairchild semi
 nzt660-a.pdf pdf_icon

ZT66

April 2005NZT660/NZT660A PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.4321SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter NZT660 NZT660A UnitsVCEO Collector-Emitter Voltage 60 60 VVCBO Collector-Bas

 0.2. Size:296K  onsemi
 nzt660 nzt660a.pdf pdf_icon

ZT66

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: PBRN113ES | BF420A | 2N3183 | 2N2473 | 2SB1144S | MM4019 | BTB1424AT3

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