ZT709 Specs and Replacement
Type Designator: ZT709
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO5
ZT709 Substitution
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ZT709 datasheet
CZT7090L www.centralsemi.com SURFACE MOUNT LOW VCE(SAT) PNP DESCRIPTION SILICON POWER TRANSISTOR The CENTRAL SEMICONDUCTOR CZT7090L is a Low VCE(SAT) PNP Transistor in a space saving Power SOT-223 surface mount package, designed for DC-DC converters for mobile systems and LAN cards, motor control, power management and strobe flash units. MARKING FULL PART NUMBER SOT-223 CASE... See More ⇒
CZT7090LE ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION LOW VCE(SAT) PNP The CENTRAL SEMICONDUCTOR CZT7090LE is an SILICON POWER TRANSISTOR Enhanced Specification Low VCE(SAT) PNP Silicon Power Transistor packaged in an industry standard SOT-223 case. High Collector Current, coupled with a Low Saturation Voltage, make this an excellent choice for industrial... See More ⇒
Detailed specifications: ZT67, ZT68, ZT69, ZT696, ZT697, ZT706, ZT706A, ZT708, S9013, ZT80, ZT81, ZT82, ZT83, ZT84, ZT87, ZT88, ZT89
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