2N5399 Specs and Replacement
Type Designator: 2N5399
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO46
2N5399 Substitution
- BJT ⓘ Cross-Reference Search
2N5399 datasheet
Databook.fxp 1/13/99 2 09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low-Noise Reverse Gate Source & Reverse Gate Drain Voltage 25 V High Power Gain Drain Source Voltage 25 V High Transconductance Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Mixer... See More ⇒
Detailed specifications: 2N5386, 2N5387, 2N5388, 2N5389, 2N538A, 2N538M, 2N539, 2N5390, BD135, 2N539A, 2N54, 2N540, 2N5400, 2N5401, 2N5404, 2N5405, 2N5406
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