All Transistors. 2N5399 Datasheet

 

2N5399 Datasheet and Replacement


   Type Designator: 2N5399
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 600 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO46
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2N5399 Datasheet (PDF)

 9.1. Size:91K  interfet
 2n5397 2n5398.pdf pdf_icon

2N5399

Databook.fxp 1/13/99 2:09 PM Page B-20B-20 01/992N5397, 2N5398N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low-NoiseReverse Gate Source & Reverse Gate Drain Voltage 25 V High Power GainDrain Source Voltage 25 V High TransconductanceContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mW Mixer

Datasheet: 2N5386 , 2N5387 , 2N5388 , 2N5389 , 2N538A , 2N538M , 2N539 , 2N5390 , 9014 , 2N539A , 2N54 , 2N540 , 2N5400 , 2N5401 , 2N5404 , 2N5405 , 2N5406 .

History: 2N118 | 2N3725 | 2N5937 | 2N3941 | 2N2786 | 2N5871-1 | 2N2742

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