2N5399 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5399
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO46
2N5399 Transistor Equivalent Substitute - Cross-Reference Search
2N5399 Datasheet (PDF)
9.1. Size:91K interfet
2n5397 2n5398.pdf
2n5397 2n5398.pdf
Databook.fxp 1/13/99 2:09 PM Page B-20B-20 01/992N5397, 2N5398N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low-NoiseReverse Gate Source & Reverse Gate Drain Voltage 25 V High Power GainDrain Source Voltage 25 V High TransconductanceContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mW Mixer
Datasheet: 2N5386 , 2N5387 , 2N5388 , 2N5389 , 2N538A , 2N538M , 2N539 , 2N5390 , 9014 , 2N539A , 2N54 , 2N540 , 2N5400 , 2N5401 , 2N5404 , 2N5405 , 2N5406 .
