All Transistors. 2N5399 Datasheet

 

2N5399 Datasheet and Replacement


   Type Designator: 2N5399
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 600 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO46
 

 2N5399 Substitution

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2N5399 Datasheet (PDF)

 9.1. Size:91K  interfet
 2n5397 2n5398.pdf pdf_icon

2N5399

Databook.fxp 1/13/99 2:09 PM Page B-20B-20 01/992N5397, 2N5398N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low-NoiseReverse Gate Source & Reverse Gate Drain Voltage 25 V High Power GainDrain Source Voltage 25 V High TransconductanceContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mW Mixer

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC1628 | 2SD844O | 2N846

Keywords - 2N5399 transistor datasheet

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