2N5416CSM4 Datasheet. Specs and Replacement
Type Designator: 2N5416CSM4 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 115 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: LCC3
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2N5416CSM4 datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors 1997 May 21 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION High voltage (m... See More ⇒
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2N5415 2N5416 SILICON PNP TRANSISTORS STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching... See More ⇒
Detailed specifications: 2N5412, 2N5413, 2N5414, 2N5415, 2N5415CSM4, 2N5415S, 2N5416, 2N5416-220M, TIP42, 2N5417, 2N5418, 2N5419, 2N541A, 2N542, 2N5420, 2N5421, 2N5422
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