2N5422 Specs and Replacement

Type Designator: 2N5422

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO39

 2N5422 Substitution

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2N5422 datasheet

 9.1. Size:132K  mospec

 2n5427-29 2n5430.pdf pdf_icon

2N5422

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 9.2. Size:17K  semelab

 2n5428a.pdf pdf_icon

2N5422

2N5428A MECHANICAL DATA MEDIUM POWER Dimensions in mm NPN SILICON TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 1.27 (0.050) 4.83 (0.190) 1.91 (0.750) 5.33 (0.210) 9.14 (0.360) min. TO66 Package. ABSOLUTE MAXIMUM RATINGS (Tcase=25 C unless otherwise stated) VCEO Co... See More ⇒

 9.3. Size:1285K  sprague

 2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf pdf_icon

2N5422

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 9.4. Size:45K  inchange semiconductor

 2n5429.pdf pdf_icon

2N5422

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5429 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE... See More ⇒

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Detailed specifications: 2N5416CSM4, 2N5417, 2N5418, 2N5419, 2N541A, 2N542, 2N5420, 2N5421, 2SD669, 2N5423, 2N5424, 2N5424A, 2N5425, 2N5426, 2N5427, 2N5428, 2N5429

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