ZTX849 Specs and Replacement
Type Designator: ZTX849
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
ZTX849 Substitution
- BJT ⓘ Cross-Reference Search
ZTX849 datasheet
NPN SILICON PLANAR MEDIUM POWER ZTX849 HIGH CURRENT TRANSISTOR ISSUE 2 MARCH 94 T i V I i I I TI V D Ii I i i E-Line i V TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V 8 V V II i V I V V i V I V V I I i II I IT i I Di i i 8 Di i i T i T T T T i i i i i i i i I i I i i i ELECTRICAL CHARACTERISTICS (at Tamb =... See More ⇒
Detailed specifications: ZTX758, ZTX788A, ZTX788B, ZTX789A, ZTX790A, ZTX792A, ZTX795A, ZTX796A, TIP42, ZTX851, ZTX853, ZTX855, ZTX857, ZTX869, ZTX948, ZTX949, ZTX951
Keywords - ZTX849 pdf specs
ZTX849 cross reference
ZTX849 equivalent finder
ZTX849 pdf lookup
ZTX849 substitution
ZTX849 replacement
