BCV63B Datasheet and Replacement
Type Designator: BCV63B
SMD Transistor Code: D96
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT143B
BCV63B Substitution
BCV63B Datasheet (PDF)
bcv63 bcv63b 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D071BCV63; BCV63BNPN general purpose doubletransistors1999 May 21Product specificationSupersedes data of 1997 Mar 10Philips Semiconductors Product specificationNPN general purpose double transistors BCV63; BCV63BFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 30 and 6 V).1 collector TR2 and base
bcv63 bcv63b.pdf

BCV63; BCV63BNPN general-purpose double transistorsRev. 4 4 August 2010 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNXP JEITABCV63 SOT143B - -BCV63B BCV64B1.2 Features and benefits Low cu
Datasheet: 2PB1219A , 2PB709A , 2PB710A , 2PC4081 , 2PC4617 , 2PC4617J , 2PC945 , 2PD1820A , D667 , BCV63 , BCV64B , BCV65 , BDL31 , BDL32 , BDP31 , BDP32 , BFE505 .
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