BCV65 Specs and Replacement
Type Designator: BCV65
SMD Transistor Code: 97_97p
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 75
Package: SOT143B
BCV65 Substitution
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BCV65 datasheet
BCV65 NPN/PNP general-purpose transistor Rev. 4 27 July 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V) Matched pair AEC-Q101 qualified Small SMD plastic package 1.3 Applications ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV65 NPN/PNP general purpose transistor 1999 Apr 22 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification NPN/PNP general purpose transistor BCV65 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 30 V). 1, 3 collector 2 common base APPLICATIONS 4 common e... See More ⇒
Detailed specifications: 2PC4081, 2PC4617, 2PC4617J, 2PC945, 2PD1820A, BCV63B, BCV63, BCV64B, MPSA42, BDL31, BDL32, BDP31, BDP32, BFE505, BFE520, BFG10, BFG10W-X
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