BDL32 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDL32
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.35 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT223
BDL32 Transistor Equivalent Substitute - Cross-Reference Search
BDL32 Datasheet (PDF)
..1. Size:48K philips
bdl32 4.pdf
bdl32 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D087BDL32PNP BISS-transistorProduct specification 1999 Apr 29Supersedes data of 1998 Aug 03Philips Semiconductors Product specificationPNP BISS-transistor BDL32FEATURES PINNING High current (max. 5 A)PIN DESCRIPTION Low voltage (max. 10 V)1 base Low collector-emitter saturation voltage ensures2 not connecte
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
