BDL32 Specs and Replacement
Type Designator: BDL32
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.35 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT223
BDL32 Substitution
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BDL32 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D087 BDL32 PNP BISS-transistor Product specification 1999 Apr 29 Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification PNP BISS-transistor BDL32 FEATURES PINNING High current (max. 5 A) PIN DESCRIPTION Low voltage (max. 10 V) 1 base Low collector-emitter saturation voltage ensures 2 not connecte... See More ⇒
Detailed specifications: 2PC4617J, 2PC945, 2PD1820A, BCV63B, BCV63, BCV64B, BCV65, BDL31, 431, BDP31, BDP32, BFE505, BFE520, BFG10, BFG10W-X, BFG11, BFG11-X
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History: BFQ151
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