BFE520 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFE520
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.4 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT353
BFE520 Transistor Equivalent Substitute - Cross-Reference Search
BFE520 Datasheet (PDF)
..1. Size:42K philips
bfe520 2.pdf
bfe520 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFE520NPN wideband differentialtransistor1996 Oct 08Product specificationSupersedes data of 1995 Sep 04File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN wideband differential transistor BFE520FEATURES PINNING - SOT353B Small sizePIN SYMBOL DESCRIPTION High power gain at low bias current and
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
