All Transistors. BFE520 Datasheet

 

BFE520 Datasheet and Replacement


   Type Designator: BFE520
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 9000 MHz
   Collector Capacitance (Cc): 0.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT353
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BFE520 Datasheet (PDF)

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BFE520

DISCRETE SEMICONDUCTORSDATA SHEETBFE520NPN wideband differentialtransistor1996 Oct 08Product specificationSupersedes data of 1995 Sep 04File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN wideband differential transistor BFE520FEATURES PINNING - SOT353B Small sizePIN SYMBOL DESCRIPTION High power gain at low bias current and

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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