All Transistors. BFG31 Datasheet

 

BFG31 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFG31
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 5000 MHz
   Collector Capacitance (Cc): 1.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT223

 BFG31 Transistor Equivalent Substitute - Cross-Reference Search

   

BFG31 Datasheet (PDF)

 ..1. Size:209K  philips
bfg31.pdf

BFG31
BFG31

DISCRETE SEMICONDUCTORS DATA SHEETBFG31PNP 5 GHz wideband transistorProduct specification 1995 Sep 12Supersedes data of November 1992NXP Semiconductors Product specificationPNP 5 GHz wideband transistor BFG31FEATURES PINNINGlfpage4 High output voltage capabilityPIN DESCRIPTION High gain bandwidth product1 emitter Good thermal stability2 base Gold

 ..2. Size:41K  philips
bfg31 2.pdf

BFG31
BFG31

DISCRETE SEMICONDUCTORSDATA SHEETBFG31PNP 5 GHz wideband transistor1995 Sep 12Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFG31FEATURES PINNING High output voltage capabilityPIN DESCRIPTIONpage4 High gain bandwidth product1 emitter

 0.1. Size:74K  philips
bfg310 xr.pdf

BFG31
BFG31

BFG310/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fre

 0.2. Size:75K  philips
bfg310w xr.pdf

BFG31
BFG31

BFG310W/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fr

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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