BFG590W Specs and Replacement

Type Designator: BFG590W

SMD Transistor Code: T1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5000 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT343N

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BFG590W datasheet

 ..1. Size:90K  philips

 bfg590w bfg590wx 3.pdf pdf_icon

BFG590W

DATA SHEET book, halfpage M3D123 BFG590W; BFG590W/X NPN 5 GHz wideband transistors 1998 Oct 15 Product specification Supersedes data of August 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590W; BFG590W/X FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N Low noise figure page ... See More ⇒

 8.1. Size:87K  philips

 bfg590 bfg590x 3.pdf pdf_icon

BFG590W

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification 1998 Oct 02 Supersedes data of 1995 Sep 19 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG590 BFG590/X High transition frequen... See More ⇒

 9.1. Size:76K  philips

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BFG590W

DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor 1995 Sep 04 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION fpage 4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 pack... See More ⇒

 9.2. Size:314K  philips

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BFG590W

DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION lfpage 4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure High transi... See More ⇒

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Detailed specifications: BFG31, BFG403W, BFG425W, BFG505, BFG505W, BFG520, BFG520W, BFG590, C945, BFG591, BFG480W, BFM505, BFM520, BFQ131, BFQ151, BFQ166, BFQ256

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