All Transistors. BFG591 Datasheet

 

BFG591 Datasheet and Replacement


   Type Designator: BFG591
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT223
 

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BFG591 Datasheet (PDF)

 ..1. Size:76K  philips
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BFG591

DISCRETE SEMICONDUCTORSDATA SHEETBFG591NPN 7 GHz wideband transistor1995 Sep 04Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 7 GHz wideband transistor BFG591FEATURES DESCRIPTIONfpage4 High power gain NPN silicon planar epitaxial transistorin a plastic, 4-pin SOT223 pack

 ..2. Size:314K  philips
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BFG591

DISCRETE SEMICONDUCTORS DATA SHEETBFG591NPN 7 GHz wideband transistorProduct specification 1995 Sep 04Supersedes data of November 1992NXP Semiconductors Product specificationNPN 7 GHz wideband transistor BFG591FEATURES DESCRIPTIONlfpage4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure High transi

 9.1. Size:87K  philips
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BFG591

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D071BFG590; BFG590/XNPN 5 GHz wideband transistorsProduct specification 1998 Oct 02Supersedes data of 1995 Sep 19Philips Semiconductors Product specificationNPN 5 GHz wideband transistors BFG590; BFG590/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG590 BFG590/X High transition frequen

 9.2. Size:90K  philips
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BFG591

DATA SHEETbook, halfpageM3D123BFG590W; BFG590W/XNPN 5 GHz wideband transistors1998 Oct 15Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 5 GHz wideband transistors BFG590W; BFG590W/XFEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistorin a 4-pin dual-emitter SOT343N Low noise figurepage

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Datasheet: BFG403W , BFG425W , BFG505 , BFG505W , BFG520 , BFG520W , BFG590 , BFG590W , 2N2222 , BFG480W , BFM505 , BFM520 , BFQ131 , BFQ151 , BFQ166 , BFQ256 , BFQ256A .

Keywords - BFG591 transistor datasheet

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