BFG591 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BFG591 Specs and Replacement

Type Designator: BFG591

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7000 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT223

BFG591 Substitution

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BFG591 datasheet

..1. Size:76K philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor 1995 Sep 04 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION fpage 4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 pack... See More ⇒

..2. Size:314K philips

bfg591.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION lfpage 4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure High transi... See More ⇒

9.1. Size:87K philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification 1998 Oct 02 Supersedes data of 1995 Sep 19 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG590 BFG590/X High transition frequen... See More ⇒

9.2. Size:90K philips

bfg590w bfg590wx 3.pdf pdf_icon

DATA SHEET book, halfpage M3D123 BFG590W; BFG590W/X NPN 5 GHz wideband transistors 1998 Oct 15 Product specification Supersedes data of August 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590W; BFG590W/X FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N Low noise figure page ... See More ⇒

Detailed specifications: BFG403W, BFG425W, BFG505, BFG505W, BFG520, BFG520W, BFG590, BFG590W, C1815, BFG480W, BFM505, BFM520, BFQ131, BFQ151, BFQ166, BFQ256, BFQ256A