BFM520 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFM520
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT363
BFM520 Transistor Equivalent Substitute - Cross-Reference Search
BFM520 Datasheet (PDF)
bfm520.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFM520Dual NPN wideband transistorProduct specification 1996 Oct 08Supersedes data of 1995 Sep 04NXP Semiconductors Product specificationDual NPN wideband transistor BFM520FEATURES PINNING - SOT363A Small sizePIN SYMBOL DESCRIPTION Temperature and hFE matched1 b1 base 1 Low noise and high gain2 e1 emitter 1 High gain
bfm520 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFM520Dual NPN wideband transistor1996 Oct 08Product specificationSupersedes data of 1995 Sep 04File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationDual NPN wideband transistor BFM520FEATURES PINNING - SOT363A Small sizePIN SYMBOL DESCRIPTION Temperature and hFE matched1 b1 base 1 Low noise
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
