All Transistors. BFM520 Datasheet

 

BFM520 Datasheet and Replacement


   Type Designator: BFM520
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 9000 MHz
   Collector Capacitance (Cc): 0.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT363
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BFM520 Datasheet (PDF)

 ..1. Size:301K  philips
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BFM520

DISCRETE SEMICONDUCTORS DATA SHEETBFM520Dual NPN wideband transistorProduct specification 1996 Oct 08Supersedes data of 1995 Sep 04NXP Semiconductors Product specificationDual NPN wideband transistor BFM520FEATURES PINNING - SOT363A Small sizePIN SYMBOL DESCRIPTION Temperature and hFE matched1 b1 base 1 Low noise and high gain2 e1 emitter 1 High gain

 ..2. Size:68K  philips
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BFM520

DISCRETE SEMICONDUCTORSDATA SHEETBFM520Dual NPN wideband transistor1996 Oct 08Product specificationSupersedes data of 1995 Sep 04File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationDual NPN wideband transistor BFM520FEATURES PINNING - SOT363A Small sizePIN SYMBOL DESCRIPTION Temperature and hFE matched1 b1 base 1 Low noise

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BLD123DAL | KTC2553 | BTB1205I3 | 2SD1725S | BDY39-6 | KTA1718D | GF180

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