BLV58 Specs and Replacement
Type Designator: BLV58
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 87 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 27 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 36 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT289A
BLV58 Substitution
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BLV58 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLV58 UHF linear push-pull power transistor September 1991 Product specification Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 FEATURES QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. High power gain Double stage internal input dim MODE OF fvision VCE ICQ Po s... See More ⇒
Detailed specifications: BLT82 , BLT94 , BLU11-SL , BLU56 , BLU86 , BLV12 , BLV193 , BLV194 , BC546 , BLV857 , BLV859 , BLV861 , BLV862 , BLV897 , BLW30 , BLW97 , BRY39 .
Keywords - BLV58 pdf specs
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History: BRY62 | BLV897
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