All Transistors. BLV897 Datasheet

 

BLV897 Datasheet and Replacement


   Type Designator: BLV897
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 97 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 18 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT324B
 

 BLV897 Substitution

   - BJT ⓘ Cross-Reference Search

   

BLV897 Datasheet (PDF)

 ..1. Size:81K  philips
 blv897.pdf pdf_icon

BLV897

DISCRETE SEMICONDUCTORSDATA SHEETBLV897UHF push-pull power transistor1997 Nov 10Preliminary specificationSupersedes data of 1997 Oct 03Philips Semiconductors Preliminary specificationUHF push-pull power transistor BLV897FEATURES PINNING - SOT324B Internal input matching for an optimum widebandPIN SYMBOL DESCRIPTIONcapability and high gain1 c1 collector 1 Polys

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MMBT3904ZW | H13003AD | UN511F | BC556B

Keywords - BLV897 transistor datasheet

 BLV897 cross reference
 BLV897 equivalent finder
 BLV897 lookup
 BLV897 substitution
 BLV897 replacement

 

 
Back to Top

 


 
.