BLV897 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BLV897 Specs and Replacement

Type Designator: BLV897

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 97 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 18 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT324B

BLV897 Substitution

- BJT ⓘ Cross-Reference Search

BLV897 datasheet

..1. Size:81K philips

blv897.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor 1997 Nov 10 Preliminary specification Supersedes data of 1997 Oct 03 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 FEATURES PINNING - SOT324B Internal input matching for an optimum wideband PIN SYMBOL DESCRIPTION capability and high gain 1 c1 collector 1 Polys... See More ⇒

Detailed specifications: BLV12 , BLV193 , BLV194 , BLV58 , BLV857 , BLV859 , BLV861 , BLV862 , TIP31 , BLW30 , BLW97 , BRY39 , BRY56 , BRY56A , BRY61 , BRY62 , BU1506DX .