All Transistors. BLV897 Datasheet

 

BLV897 Datasheet and Replacement


   Type Designator: BLV897
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 97 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 18 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT324B
 

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BLV897 Datasheet (PDF)

 ..1. Size:81K  philips
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BLV897

DISCRETE SEMICONDUCTORSDATA SHEETBLV897UHF push-pull power transistor1997 Nov 10Preliminary specificationSupersedes data of 1997 Oct 03Philips Semiconductors Preliminary specificationUHF push-pull power transistor BLV897FEATURES PINNING - SOT324B Internal input matching for an optimum widebandPIN SYMBOL DESCRIPTIONcapability and high gain1 c1 collector 1 Polys

Datasheet: BLV12 , BLV193 , BLV194 , BLV58 , BLV857 , BLV859 , BLV861 , BLV862 , 2SD2499 , BLW30 , BLW97 , BRY39 , BRY56 , BRY56A , BRY61 , BRY62 , BU1506DX .

History: PPT8N30E2 | PPT523T503E0-2 | 2SA1464

Keywords - BLV897 transistor datasheet

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