All Transistors. BLV897 Datasheet

 

BLV897 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BLV897
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 97 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 18 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT324B

 BLV897 Transistor Equivalent Substitute - Cross-Reference Search

   

BLV897 Datasheet (PDF)

 ..1. Size:81K  philips
 blv897.pdf

BLV897 BLV897

DISCRETE SEMICONDUCTORSDATA SHEETBLV897UHF push-pull power transistor1997 Nov 10Preliminary specificationSupersedes data of 1997 Oct 03Philips Semiconductors Preliminary specificationUHF push-pull power transistor BLV897FEATURES PINNING - SOT324B Internal input matching for an optimum widebandPIN SYMBOL DESCRIPTIONcapability and high gain1 c1 collector 1 Polys

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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