All Transistors. BLW97 Datasheet

 

BLW97 Datasheet and Replacement


   Type Designator: BLW97
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 190 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 33 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 230 MHz
   Collector Capacitance (Cc): 380 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT121B
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BLW97 Datasheet (PDF)

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BLW97

DISCRETE SEMICONDUCTORSDATA SHEETBLW97HF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF power transistor BLW97severe load-mismatch conditions. AllDESCRIPTIONleads are isolated from the flange.N-P-N silicon planar epitaxialThe transistors are supplied intransistor designed for use in class-A,matched hFE groups.AB and

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: FCX705 | 2SC2298C | BFY24 | KT875G | SGS6387 | BD239F | XP6111

Keywords - BLW97 transistor datasheet

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