BLW97 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW97
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 190 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 33 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 230 MHz
Collector Capacitance (Cc): 380 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT121B
BLW97 Transistor Equivalent Substitute - Cross-Reference Search
BLW97 Datasheet (PDF)
..1. Size:61K philips
blw97.pdf
blw97.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW97HF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF power transistor BLW97severe load-mismatch conditions. AllDESCRIPTIONleads are isolated from the flange.N-P-N silicon planar epitaxialThe transistors are supplied intransistor designed for use in class-A,matched hFE groups.AB and
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
