BLW97 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BLW97 Specs and Replacement

Type Designator: BLW97

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 190 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 33 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 230 MHz

Collector Capacitance (Cc): 380 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT121B

BLW97 Substitution

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BLW97 datasheet

..1. Size:61K philips

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DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor August 1986 Product specification Philips Semiconductors Product specification HF power transistor BLW97 severe load-mismatch conditions. All DESCRIPTION leads are isolated from the flange. N-P-N silicon planar epitaxial The transistors are supplied in transistor designed for use in class-A, matched hFE groups. AB and ... See More ⇒

Detailed specifications: BLV194 , BLV58 , BLV857 , BLV859 , BLV861 , BLV862 , BLV897 , BLW30 , 2SD313 , BRY39 , BRY56 , BRY56A , BRY61 , BRY62 , BU1506DX , BU1507AX , BU1507DX .