All Transistors. BLW97 Datasheet

 

BLW97 Datasheet and Replacement


   Type Designator: BLW97
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 190 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 33 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 230 MHz
   Collector Capacitance (Cc): 380 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT121B
 

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BLW97 Datasheet (PDF)

 ..1. Size:61K  philips
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BLW97

DISCRETE SEMICONDUCTORSDATA SHEETBLW97HF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF power transistor BLW97severe load-mismatch conditions. AllDESCRIPTIONleads are isolated from the flange.N-P-N silicon planar epitaxialThe transistors are supplied intransistor designed for use in class-A,matched hFE groups.AB and

Datasheet: BLV194 , BLV58 , BLV857 , BLV859 , BLV861 , BLV862 , BLV897 , BLW30 , BC558 , BRY39 , BRY56 , BRY56A , BRY61 , BRY62 , BU1506DX , BU1507AX , BU1507DX .

History: ZTX213BK | ZT2477 | 3CA200D | ZTX213BL

Keywords - BLW97 transistor datasheet

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