BU2525DX Datasheet, Equivalent, Cross Reference Search
Type Designator: BU2525DX
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 13.5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 145 pF
Forward Current Transfer Ratio (hFE), MIN: 11
Noise Figure, dB: -
Package: SOT399
BU2525DX Transistor Equivalent Substitute - Cross-Reference Search
BU2525DX Datasheet (PDF)
bu2525dx 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT
bu2525dx.pdf
isc Silicon NPN Power Transistor BU2525DXDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits oflarge screen color TV receiversABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
bu2525df 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT
bu2525dw 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticenvelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M
bu2525df.pdf
isc Silicon NPN Power Transistor BU2525DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
bu2525dw.pdf
isc Silicon NPN Power Transistor BU2525DWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
