All Transistors. ZXTN25020DFH Datasheet

 

ZXTN25020DFH Datasheet, Equivalent, Cross Reference Search

Type Designator: ZXTN25020DFH

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.25 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 4.5 A

Transition Frequency (ft): 215 MHz

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SOT23

ZXTN25020DFH Transistor Equivalent Substitute - Cross-Reference Search

 

ZXTN25020DFH Datasheet (PDF)

1.1. zxtn25020cfh.pdf Size:396K _diodes

ZXTN25020DFH
ZXTN25020DFH

ZXTN25020CFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 70V BVCEO > 20V BVECO > 5V IC(cont) = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 28 m PD = 1.25W Complementary part number ZXTP25020CFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratin

1.2. zxtn25020dfh.pdf Size:257K _diodes

ZXTN25020DFH
ZXTN25020DFH

ZXTN25020DFH 20V SOT23 NPN medium power transistor Summary BVCEX > 100V; BV(BR)CEO > 20V BVECO > 5V; IC(CONT) = 4.5A RCE(sat) = 28 m typical VCE(sat) < 43 mV @ 1A; PD = 1.25W Complementary part number ZXTP25020DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact

 1.3. zxtn25020dg.pdf Size:218K _diodes

ZXTN25020DFH
ZXTN25020DFH

ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC(cont) = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31m? PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and pow

1.4. zxtn25020bfh.pdf Size:394K _diodes

ZXTN25020DFH
ZXTN25020DFH

ZXTN25020BFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 50V BVCEO > 20V BVECO > 3V IC(cont) = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 27 m PD = 1.25W Complementary part number ZXTP25020BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and rati

 1.5. zxtn25020dfl.pdf Size:423K _diodes

ZXTN25020DFH
ZXTN25020DFH

ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC(cont) = 2A ICM = 8A VCE(sat) < 70mV @ 1A RCE(sat) = 55m PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features

1.6. zxtn25020dz.pdf Size:401K _diodes

ZXTN25020DFH
ZXTN25020DFH

ZXTN25020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC(cont) = 6A VCE(sat) < 48mV @ 1A RCE(sat) = 30m PD = 2.4W Complementary part number ZXTP25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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