2N5470 Datasheet and Replacement

   Type Designator: 2N5470
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 3.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2000 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO251
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