2N5470 Specs and Replacement

Type Designator: 2N5470

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 3.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2000 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO251

 2N5470 Substitution

- BJT ⓘ Cross-Reference Search

 

2N5470 datasheet

NO PDF data!

Detailed specifications: 2N5455, 2N5456, 2N546, 2N5466, 2N5467, 2N5468, 2N5469, 2N547, TIP122, 2N5477, 2N5478, 2N5479, 2N548, 2N5480, 2N5481, 2N5482, 2N5483

Keywords - 2N5470 pdf specs

 2N5470 cross reference

 2N5470 equivalent finder

 2N5470 pdf lookup

 2N5470 substitution

 2N5470 replacement