MMDT4403 Datasheet and Replacement

MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 C2 B1 E1 Ideal for Low Power Amplification and Switching Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 B C Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 "Green" Device (Note 4 and 5) E2 B2 C1C 2.00 2.20 Mechanical Data D 0.

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMDT4403Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Epitaxial Planar Die ConstructionPlastic-Encapsulate Ideal for Low Power Amplification and Switching

MMDT4403PNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.O PCM : 0.2 W (Temp.=25 C) .053(1.35).096(2.45).045(1.15).085(2.15)Collector current.018(0.46).010(0.26)ICM : - 0.6 A.014(0.35).006(0.15)C B E.006(0.15)2 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T DUAL TRANSISTOR (PNP+PNP) MMDT4403SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (Ta=25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO

MMDT4403 SOT-363 Dual Transistor (PNP)SOT-363Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5

RoHS COMPLIANT MMDT4403Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K2T Equivalent circuit 1 / 5 S-S3079 Yangzhou

Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP)FEATURESSOT-363 Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (Ta=25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current

MMDT4401 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-363 Ideal for Low Power Amplification and Switching C2 B1 E1Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 Qualified to AEC-Q101 Standards for High Reliability CBB 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1 C 2.00 2.20

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Transistors

MMDT4401Features Epitaxial Planar Die Construction Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Dual NPN Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Spec

MMDT4401NPN Plastic-EncapsulateElektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REFPower Dissipation. (0.525)REFO PCM : 0.2 W (Temp.=25 C) .053(1.35).096(2.45).045(1.15).085(2.15)Collector Current.018(0.46).010(0.26)ICM : 0.6 A.014(0.35).006(0.15)C B E.006(0.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT4401 DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-B

MMDT4401 SOT-363 Dual Transistor (NPN)SOT-363Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value Units Dimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V

MMDT4401DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTORPOWER 225 mWattVOLTAGE 40 VoltFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE =40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic Te

MMDT4401SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and SwitchingMRKING:K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitt

RoHS COMPLIANT MMDT4401Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K2X Equivalent circuit 1 / 5 S-S3078 Yangzhou