ZXTN25050DFH Datasheet, Equivalent, Cross Reference Search
Type Designator: ZXTN25050DFH
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 4 A
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 240
Noise Figure, dB: -
Package: SOT23
ZXTN25050DFH Transistor Equivalent Substitute - Cross-Reference Search
ZXTN25050DFH Datasheet (PDF)
1.1. zxtn25050dfh.pdf 
Size:419K _diodes
ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC(cont) = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suite
3.1. zxtn25060bz.pdf Size:775K _diodes
ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC(cont) = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Fea
3.2. zxtn25040dfh.pdf Size:398K _diodes
ZXTN25040DFH 40V, SOT23, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC(cont) = 4A VCE(sat) < 55 mV @ 1A RCE(sat) = 35 m PD = 1.25W Complementary part number ZXTP25040DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratin
3.3. zxtn25020cfh.pdf Size:396K _diodes
ZXTN25020CFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 70V BVCEO > 20V BVECO > 5V IC(cont) = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 28 m PD = 1.25W Complementary part number ZXTP25020CFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratin
3.4. zxtn25020dfh.pdf Size:257K _diodes
ZXTN25020DFH 20V SOT23 NPN medium power transistor Summary BVCEX > 100V; BV(BR)CEO > 20V BVECO > 5V; IC(CONT) = 4.5A RCE(sat) = 28 m typical VCE(sat) < 43 mV @ 1A; PD = 1.25W Complementary part number ZXTP25020DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact
3.5. zxtn25060bfh.pdf Size:393K _diodes
ZXTN25060BFH 60V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC(cont) = 3.5A VCE(sat) < 65 mV @ 1A RCE(sat) = 43 m PD = 1.25W Complementary part number ZXTP25060BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and rati
3.6. zxtn25040dz.pdf Size:760K _diodes
ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC(cont) = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving an
3.7. zxtn25012efh.pdf Size:381K _diodes
ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC(cont) = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited
3.8. zxtn25020dg.pdf Size:218K _diodes
ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC(cont) = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31m? PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and pow
3.9. zxtn25040dfl.pdf Size:440K _diodes
ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC(cont) = 1.5A VCE(sat) < 85mV @ 1A RCE(sat) = 59m PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features High
3.10. zxtn25015dfh.pdf Size:402K _diodes
ZXTN25015DFH 15V, SOT23, NPN medium power transistor Summary BVCEX > 30V BVCEO > 15V BVECO > 4.5V IC(cont) = 5A VCE(sat) < 40 mV @ 1A RCE(sat) = 25 m PD = 1.25W Complementary part number ZXTP25015DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and rat
3.11. zxtn25012ez.pdf Size:394K _diodes
ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC(cont) = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation 12V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and vario
3.12. zxtn25020bfh.pdf Size:394K _diodes
ZXTN25020BFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 50V BVCEO > 20V BVECO > 3V IC(cont) = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 27 m PD = 1.25W Complementary part number ZXTP25020BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and rati
3.13. zxtn25012efl.pdf Size:482K _diodes
ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC(cont) = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m PD = 350mW Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features High peak current E Low saturation voltag
3.14. zxtn25020dfl.pdf Size:423K _diodes
ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC(cont) = 2A ICM = 8A VCE(sat) < 70mV @ 1A RCE(sat) = 55m PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features
3.15. zxtn25020dz.pdf Size:401K _diodes
ZXTN25020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC(cont) = 6A VCE(sat) < 48mV @ 1A RCE(sat) = 30m PD = 2.4W Complementary part number ZXTP25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and
Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .
