All Transistors. ZXTP2025F Datasheet

 

ZXTP2025F Datasheet, Equivalent, Cross Reference Search


   Type Designator: ZXTP2025F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 5 A
   Transition Frequency (ft): 190 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT23

 ZXTP2025F Transistor Equivalent Substitute - Cross-Reference Search

   

ZXTP2025F Datasheet (PDF)

 ..1. Size:506K  diodes
zxtp2025f.pdf

ZXTP2025F ZXTP2025F

ZXTP2025F50V, SOT23, PNP medium power transistorSummary V(BR)CEO > -50VIC(cont) = -5A RCE(sat) = 30m typicalVCE(sat)

 7.1. Size:432K  diodes
zxtp2029f.pdf

ZXTP2025F ZXTP2025F

ZXTP2029F100V, SOT23, PNP medium power transistorSummary V(BR)CEV > -130V, V(BR)CEO > -100VIC(cont) = -3A RCE(sat) = 45m typicalVCE(sat)

 7.2. Size:444K  diodes
zxtp2027f.pdf

ZXTP2025F ZXTP2025F

ZXTP2027F 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -60V Case: SOT23 IC = -4A High Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = -10A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage -60mV Max @ IC = -1A. Moisture Sensitivity: Level 1 per

 8.1. Size:413K  diodes
zxtp2013g.pdf

ZXTP2025F ZXTP2025F

A Product Line of Diodes Incorporated GreenZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -100V Case: SOT223 IC = -5A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(S

 8.2. Size:427K  diodes
zxtp2012z.pdf

ZXTP2025F ZXTP2025F

ZXTP2012Z Green60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -60V Case: SOT89 IC = -4.3A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL RSAT = 32m for a Low Equivalent On-Resistance Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

 8.3. Size:126K  diodes
zxtp2009z.pdf

ZXTP2025F ZXTP2025F

ZXTP2009Z40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTORIN SOT89SUMMARYBVCEO = -40V : RSAT = 29m ; IC = -5.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 40V PNP transistoroffers low on state losses making it ideal for use in DC-DC circuits, lineswitching and various driving and power management functions.FEATURESSOT89 Extremely low equivale

 8.4. Size:489K  diodes
zxtp2008z.pdf

ZXTP2025F ZXTP2025F

GreenZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR Features Mechanical Data BVCEO > -30V Case: SOT89 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

 8.5. Size:445K  diodes
zxtp2012g.pdf

ZXTP2025F ZXTP2025F

ZXTP2012G Green60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -60V Case: SOT223 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -15A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

 8.6. Size:116K  diodes
zxtp2012a.pdf

ZXTP2025F ZXTP2025F

ZXTP2012A60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINESUMMARYBVCEO = -60V : RSAT = 38m ; IC = -3.5ADESCRIPTIONPackaged in the E-line outline this new low saturation 60V PNP transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESE-line 3.5 amps continuous current Up

 8.7. Size:325K  diodes
zxtp2041f.pdf

ZXTP2025F ZXTP2025F

A Product Line ofDiodes Incorporated ZXTP2041F 40V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case: SOT23 IC = -1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage VCE(sat)

 8.8. Size:964K  diodes
zxtp2014z.pdf

ZXTP2025F ZXTP2025F

ZXTP2014Z 140V PNP LOW SATURATION MEDIUM VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -140V Case: SOT89 IC = -3A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL Low Saturation Voltage VCE(sat)

 8.9. Size:444K  diodes
zxtp2008g.pdf

ZXTP2025F ZXTP2025F

ZXTP2008G Green30V PNP LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -30V Case: SOT223 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

 8.10. Size:95K  diodes
zxtp2013z.pdf

ZXTP2025F ZXTP2025F

ZXTP2013Z100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89SUMMARYBVCEO = -100V : RSAT = 57m ; IC = -3.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 100V PNP transistoroffers low on state losses making it ideal for use in DC-DC circuits, lineswitching and various driving and power management functions.FEATURES 3.5 amps continuous currentSOT89

 8.11. Size:423K  diodes
zxtp2014g.pdf

ZXTP2025F ZXTP2025F

A Product Line of Diodes Incorporated Green ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -140V Case: SOT223 IC = -4A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(

 8.12. Size:263K  diodes
zxtp2009zq.pdf

ZXTP2025F ZXTP2025F

ZXTP2009ZQ 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR Description Mechanical Data This bipolar junction transistor (BJT) is designed to meet the stringent Case: SOT89 requirement of automotive applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: F

 8.13. Size:155K  diodes
zxtp2039f.pdf

ZXTP2025F ZXTP2025F

ZXTP2039FSOT23 80 volt PNP silicon planar medium power transistorSummary V(BR)CEV > -80VV(BR)CEO > -60VIc(cont) = -1A Vce(sat)

 8.14. Size:94K  diodes
zxtp2006e6.pdf

ZXTP2025F ZXTP2025F

ZXTP2006E620V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6SUMMARYBVCEO = -20V : RSAT = 31m ; IC = -3.5ADESCRIPTIONPackaged in the SOT23-6 outline this new lowsaturation 20V PNP transistor offers extremely low onstate losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESSOT23-6 3.5 Amps continuous current Extre

 8.15. Size:1115K  kexin
zxtp2013.pdf

ZXTP2025F ZXTP2025F

SMD Type TransistorsPNP TransistorsZXTP2013 (KXTP2013)Unit:mmSOT-2236.500.23.000.1 Features4 5 A continuous current Up to 10 A peak current Very low saturation voltages1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Colle

 8.16. Size:962K  kexin
zxtp2014z.pdf

ZXTP2025F ZXTP2025F

SMD Type TransistorsPNP TransistorsZXTP2014Z (KXTP2014Z) Features1.70 0.1 3 amps continuous current Up to 10 amps peak current Very low saturation voltages Marking: 9550.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCE

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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