MMDT5451 Datasheet and Replacement

MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary Pair: 1 5551 Type NPN Case Material: Molded Plastic, Green Molding Compound, 1 5401 Type PNP UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sens

MMDT5451 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor (Dual) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-363 FEATURES DUAL TRANSISTOR (NPN+PNP) A Epitaxial Planar Die Construction EL Ideal for low Power Amplification and Switching One 5551(NPN), one 5401(PNP) BMARKING : KNM FC HJD G K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 DUAL TRANSISTOR (NPN+PNP) 6FEATURES 54 Epitaxial Planar Die Construction Ideal for low Power Amplification and Switching12 One 5551(NPN), one 5401(PNP)3MRKING:KNM MAXI

MMDT5401 150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary NPN Type Available (MMDT5551) Case Material: Molded Plastic, Green Molding Compound, Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Packag

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT5401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Marking:K4MPlastic-Encapsulate Ideal for Low Power Amplification and Switching Ultra-small Surface M

MMDT5401Plastic-EncapsulateElektronische BauelementeMulti-Chip (PNP+PNP) TransistorRoHS Compliant ProductSOT-363o.055(1.40)8.047(1.20)0o .026TYPFeatures(0.65TYP) .021REF(0.525)REF* Epitaxial Planar Die Construction.053(1.35)* Complementary NPN Type Available (MMDT5551) .096(2.45).045(1.15).085(2.15).018(0.46).010(0.26)C2 B1 E1.014(0.35).006(0.15

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO

MMDT5401 Dual Transistor (NPN/PNP)SOT-363Features Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Vol

SMD Type TransistorsPNP TransistorsMMDT5401 (KMDT5401) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (PNP+PNP) Complementary NPN Type Available(MMDT 5551) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -

RoHS COMPLIANT MMDT5401Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K4M Equivalent circuit 1 / 5 S-S3208 Yangzhou

Plastic-Encapsulate TransistorsSOT-363DUAL TRANSISTOR (PNP+PNP) FEATURES Complementary to MMDT5551DW Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV Emitter-Base Vo