ZUMT591 Datasheet, Equivalent, Cross Reference Search
Type Designator: ZUMT591
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 1 A
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT323
ZUMT591 Transistor Equivalent Substitute - Cross-Reference Search
ZUMT591 Datasheet (PDF)
zumt591.pdf
SOT323 PNP SILICON PLANARZUMT591HIGH PERFORMANCE TRANSISTORDRAFT SPECIFICATION ISSUE A OCTOBER 94FEATURES* Extremely low saturation voltage* 500mW power dissipationE* 1 Amp continuous collector current (IC)CV*-5V* APPLICATIONS* Ideally suited for space / weight critical applicationsB10V*SOT323HzABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollect
zumt5179.pdf
SOT323 NPN SILICON PLANARZUMT5179HIGH FREQUENCY TRANSISTORISSUE 1- NOVEMBER 1998FEATURES* High fT=900MHz Min* Max capacitance=1pF* Low noise 4.5dBPARTMARKING DETAIL - T6ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 2.5 VContinuous Collector Current IC 50 mAPower Dissi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
