All Transistors. ZXT1053AK Datasheet

 

ZXT1053AK Datasheet, Equivalent, Cross Reference Search

Type Designator: ZXT1053AK

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 3.4 W

Maximum Collector-Emitter Voltage |Vce|: 75 V

Maximum Collector Current |Ic max|: 5 A

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO252_DPAK

ZXT1053AK Transistor Equivalent Substitute - Cross-Reference Search

 

ZXT1053AK Datasheet (PDF)

1.1. zxt1053ak.pdf Size:140K _diodes

ZXT1053AK
ZXT1053AK

ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES DPAK 5 amps continuous current Up to 10 amps peak

5.1. zxt10p40de6.pdf Size:235K _diodes

ZXT1053AK
ZXT1053AK

ZXT10P40DE6 SuperSOT 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 105m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEA

5.2. zxt10p20de6.pdf Size:237K _diodes

ZXT1053AK
ZXT1053AK

ZXT10P20DE6 SuperSOT 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FE

 5.3. zxt10n50de6.pdf Size:229K _diodes

ZXT1053AK
ZXT1053AK

ZXT10N50DE6 SuperSOT 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEATUR

5.4. zxt10n15de6.pdf Size:236K _diodes

ZXT1053AK
ZXT1053AK

ZXT10N15DE6 SuperSOT 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEATUR

 5.5. zxt10p12de6.pdf Size:239K _diodes

ZXT1053AK
ZXT1053AK

ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEAT

5.6. zxt10n20de6.pdf Size:237K _diodes

ZXT1053AK
ZXT1053AK

ZXT10N20DE6 SuperSOT 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEAT

Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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