FJB3307D Datasheet, Equivalent, Cross Reference Search

   Type Designator: FJB3307D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 8 A
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO263

FJB3307D Transistor Equivalent Substitute - Cross-Reference Search