All Transistors. FJE5304D Datasheet

 

FJE5304D Datasheet and Replacement


   Type Designator: FJE5304D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 4 A
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO126
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FJE5304D Datasheet (PDF)

 ..1. Size:479K  fairchild semi
 fje5304d.pdf pdf_icon

FJE5304D

FJE5304DNPN Triple Diffused Planar Silicon TransistorHigh Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling diode Suitable for Electronic Ballast Application Small Variance in Storage TimeEquivalent CircuitCBTO-1261E1.Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Para

 ..2. Size:301K  onsemi
 fje5304d.pdf pdf_icon

FJE5304D

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: NSVBCX17LT1G | 2SC1446Q | ECG341 | MPQ3645 | U2T355 | DSC7505 | 2SC3299O

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