FJE5304D Specs and Replacement
Type Designator: FJE5304D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 4 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO126
FJE5304D Substitution
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FJE5304D datasheet
FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling diode Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B TO-126 1 E 1.Emitter 2.Collector 3.Base Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Para... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FJB102 , FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , TIP142 , FJI5603D , FJL4215 , FJL4315 , FJL6920 , FJN3303F , FJP13007 , FJP13009 , FJP3305 .
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