FJE5304D Datasheet, Equivalent, Cross Reference Search
Type Designator: FJE5304D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 4 A
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO126
FJE5304D Transistor Equivalent Substitute - Cross-Reference Search
FJE5304D Datasheet (PDF)
fje5304d.pdf
FJE5304DNPN Triple Diffused Planar Silicon TransistorHigh Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling diode Suitable for Electronic Ballast Application Small Variance in Storage TimeEquivalent CircuitCBTO-1261E1.Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Para
fje5304d.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
