FJPF5021 Datasheet, Equivalent, Cross Reference Search

FJPF5021High Voltage and High Reliability High Speed Switching : tF = 0.1s(Typ.) Wide SOATO-220F11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FJPF5027High Voltage and High Reliability High Speed Switching Wide SOATO-220F11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Cur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FJPF5321High Voltage and High Reliability High speed Switching Wide Safe Operating AreaTO-220F11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 800 VVCEO Collector-Emitter Voltage 500 VVEBO Emitter-Base Voltage 7 VIC Collector Cu

January 2009FJPF5200NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A.TO-220F High Power Dissipation : 50watts. 1 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Ga