2N5529 Specs and Replacement
Type Designator: 2N5529
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO61
2N5529 Substitution
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2N5529 datasheet
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Detailed specifications: 2N55, 2N550, 2N551, 2N552, 2N5525, 2N5526, 2N5527, 2N5528, TIP127, 2N553, 2N5530, 2N5531, 2N5532, 2N5533, 2N5534, 2N5535, 2N5536
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