2N5530 Specs and Replacement
Type Designator: 2N5530
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO61
2N5530 Substitution
- BJT ⓘ Cross-Reference Search
2N5530 datasheet
NO PDF data!
Detailed specifications: 2N551, 2N552, 2N5525, 2N5526, 2N5527, 2N5528, 2N5529, 2N553, 2SD2499, 2N5531, 2N5532, 2N5533, 2N5534, 2N5535, 2N5536, 2N5537, 2N5538
Keywords - 2N5530 pdf specs
2N5530 cross reference
2N5530 equivalent finder
2N5530 pdf lookup
2N5530 substitution
2N5530 replacement
