2SC6043 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC6043
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 420 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: MP
2SC6043 Transistor Equivalent Substitute - Cross-Reference Search
2SC6043 Datasheet (PDF)
2sc6043.pdf
Ordering number : ENN8326 2SC6043NPN Epitaxial Planar Silicon Transistors2SC6043High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Ra
2sc6042.pdf
2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.2 s (max) (IC = 0.3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitColle
2sc6040.pdf
2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.2 s (max) (IC = 0.3 A) High breakdown voltage: VCES = 800 V, VCEO = 410 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitC
2sc6044.pdf
Ordering number : ENN8251 2SC6044NPN Epitaxial Planar Silicon Transistors2SC6044High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching.SpecificationsAbsolute Maximum Ratin
2sc6046.pdf
2SC6046FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION UnitmmOUTLINE DRAWING 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low VCEsat. 2.8 0.65 1.5 0.65FEATURE High collector current ICMAX=600mA Low collector to emitter saturation voltage VCEsa
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
