BUB323Z Datasheet, Equivalent, Cross Reference Search
Type Designator: BUB323Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: D2PAK
BUB323Z Transistor Equivalent Substitute - Cross-Reference Search
BUB323Z Datasheet (PDF)
bub323z.pdf
BUB323ZNPN Silicon PowerDarlingtonHigh Voltage AutoprotectedD2PAK for Surface Mounthttp://onsemi.comThe BUB323Z is a planar, monolithic, highvoltage powerDarlington with a builtin active zener clamping circuit. This device isspecifically designed for unclamped, inductive applications such asAUTOPROTECTEDElectronic Ignition, Switching Regulators and Motor Control, and
njvbub323zt4g.pdf
BUB323ZNPN Silicon PowerDarlingtonHigh Voltage AutoprotectedD2PAK for Surface Mounthttp://onsemi.comThe BUB323Z is a planar, monolithic, high-voltage powerDarlington with a built-in active zener clamping circuit. This device isAUTOPROTECTEDspecifically designed for unclamped, inductive applications such asElectronic Ignition, Switching Regulators and Motor Control.DARLINGT
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: D11C1F1
